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5.0
Professor rating
5.0
Difficulty
1,000
Ratings given
99%
Would take again
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Mean GPA:
5.0
Professor rating
5.0
Difficulty
1,000
Ratings given
99%
Would take again
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EE 3110 Gil Lee | |||||
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EE 3110 Gil Lee | |||||
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Grades: 748
Median GPA: B
Mean GPA: 2.751
3.8
Professor rating
2.8
Difficulty
33
Ratings given
91%
Would take again
Electronic Devices Laboratory
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 79
Median GPA: A-
Mean GPA: 3.190
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Grades: 748
Median GPA: B
Mean GPA: 2.751
3.8
Professor rating
2.8
Difficulty
33
Ratings given
91%
Would take again
Electronic Devices Laboratory
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 79
Median GPA: A-
Mean GPA: 3.190
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