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Search Results
| Name | Grades | Rating | |||
|---|---|---|---|---|---|
Not teaching in Spring 2026 | |||||
EE 4330 (Overall) | |||||
A- | |||||
EE 4330 Wenchuang Hu | |||||
A- | |||||
EE 4330 Mark Tinker | |||||
B+ | |||||
EE 4330 Chadwin Young | |||||
A- | |||||
Search Results
| Name | Grades | Rating | |||
|---|---|---|---|---|---|
Not teaching in Spring 2026 | |||||
EE 4330 (Overall) | |||||
A- | |||||
EE 4330 Wenchuang Hu | |||||
A- | |||||
EE 4330 Mark Tinker | |||||
B+ | |||||
EE 4330 Chadwin Young | |||||
A- | |||||
Integrated Circuit Technology
EE 4330
Erik Jonsson School of Engineering and Computer Science
Principles of design and fabrication of integrated circuits. Bipolar and MOS technologies. Passive and active component performance, fabrication techniques including epitaxial growth, photolithography, oxidation, diffusion, ion-implantation, thin and thick film components. Design and layout of integrated devices. Relations between layout and fabrication technique. 3 credit hours.
Prerequisite: CE 3310 or EE 3310.
Offering Frequency: Each semester
Grades: 457
Median GPA: A-
Mean GPA: 3.399
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Integrated Circuit Technology
EE 4330
Erik Jonsson School of Engineering and Computer Science
Principles of design and fabrication of integrated circuits. Bipolar and MOS technologies. Passive and active component performance, fabrication techniques including epitaxial growth, photolithography, oxidation, diffusion, ion-implantation, thin and thick film components. Design and layout of integrated devices. Relations between layout and fabrication technique. 3 credit hours.
Prerequisite: CE 3310 or EE 3310.
Offering Frequency: Each semester
Grades: 457
Median GPA: A-
Mean GPA: 3.399
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