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5.0
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| Name | Grades | Rating | |||
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EE 3311 Gil Lee | |||||
B- | |||||
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| Name | Grades | Rating | |||
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EE 3311 Gil Lee | |||||
B- | |||||
Grades: 908
Median GPA: B
Mean GPA: 2.814
3.7
Professor rating
2.8
Difficulty
31
Ratings given
90%
Would take again
Electronic Circuits
EE 3311 (Same as CE 3311)
Erik Jonsson School of Engineering and Computer Science
Large-signal and small-signal characteristics of diodes, BJT and MOSFET transistors. Analysis of circuits containing diodes. Analysis of the DC and small-signal characteristics of single-stage BJT and MOSFET amplifiers. Analysis of circuits with an operational amplifier as a black box. Introduction of high-frequency models of BJT and MOSFET transistors and methods to analyze amplifier frequency response. 3 credit hours.
Prerequisite: CE 2301 or EE 2301.
Offering Frequency: Each semester
Grades: 1,041
Median GPA: B
Mean GPA: 2.981
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Grades: 908
Median GPA: B
Mean GPA: 2.814
3.7
Professor rating
2.8
Difficulty
31
Ratings given
90%
Would take again
Electronic Circuits
EE 3311 (Same as CE 3311)
Erik Jonsson School of Engineering and Computer Science
Large-signal and small-signal characteristics of diodes, BJT and MOSFET transistors. Analysis of circuits containing diodes. Analysis of the DC and small-signal characteristics of single-stage BJT and MOSFET amplifiers. Analysis of circuits with an operational amplifier as a black box. Introduction of high-frequency models of BJT and MOSFET transistors and methods to analyze amplifier frequency response. 3 credit hours.
Prerequisite: CE 2301 or EE 2301.
Offering Frequency: Each semester
Grades: 1,041
Median GPA: B
Mean GPA: 2.981
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