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5.0
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5.0
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1,000
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99%
Would take again
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| Name | Grades | Rating | |||
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Not teaching in Spring 2026 | |||||
EE 3110 Gil Lee | |||||
B+ | |||||
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| Name | Grades | Rating | |||
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Not teaching in Spring 2026 | |||||
EE 3110 Gil Lee | |||||
B+ | |||||
Grades: 908
Median GPA: B
Mean GPA: 2.814
3.7
Professor rating
2.8
Difficulty
31
Ratings given
90%
Would take again
Electronic Devices Laboratory
EE 3110 (Same as CE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 214
Median GPA: A-
Mean GPA: 3.173
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Grades: 908
Median GPA: B
Mean GPA: 2.814
3.7
Professor rating
2.8
Difficulty
31
Ratings given
90%
Would take again
Electronic Devices Laboratory
EE 3110 (Same as CE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 214
Median GPA: A-
Mean GPA: 3.173
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