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Search Results
| Name | Grades | Rating | |||
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Not teaching in Spring 2026 | |||||
CE 3110 (Overall) | |||||
B+ | |||||
CE 3110 Gil Lee | |||||
B- | |||||
CE 3110 Jeong-Bong Lee | |||||
A | |||||
CE 3110 Mark Tinker | |||||
Search Results
| Name | Grades | Rating | |||
|---|---|---|---|---|---|
Not teaching in Spring 2026 | |||||
CE 3110 (Overall) | |||||
B+ | |||||
CE 3110 Gil Lee | |||||
B- | |||||
CE 3110 Jeong-Bong Lee | |||||
A | |||||
CE 3110 Mark Tinker | |||||
Electronic Devices Laboratory
CE 3110 (Same as EE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany CE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 42
Median GPA: B+
Mean GPA: 3.182
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Electronic Devices Laboratory
CE 3110 (Same as EE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany CE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 42
Median GPA: B+
Mean GPA: 3.182
Click a checkbox to add something to compare.