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Electronic Devices Laboratory
CE 3110 (Same as EE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany CE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 65
Median GPA: A
Mean GPA: 3.323
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Electronic Devices Laboratory
CE 3110 (Same as EE 3110)
Erik Jonsson School of Engineering and Computer Science
Laboratory to accompany CE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE 3310 or EE 3310. 1 credit hours.
Prerequisite: RHET 1302.
Offering Frequency: Each semester
Grades: 65
Median GPA: A
Mean GPA: 3.323
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